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| 2SC5219 Silicon NPN Triple Diffused Planar Application Character display horizontal deflection output Features * High breakdown voltage VCES = 1700 V * High speed switching tf = 0.15 sec (typ) * Built-in damper diode type * Isolated package TO-3P*FM Outline TO-3PFM 2 1. Base 2. Collector 3. Emitter 1 ID 1 2 3 3 2SC5219 Absolute Maximum Ratings (Ta = 25C) Item Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Diode current Note: 1. Value at TC = 25C Symbol VCES VEBO IC IC(peak) PC* Tj Tstg ID 1 Ratings 1700 6 8 16 50 150 -55 to +150 8 Unit V V A A W C C A Electrical Characteristics (Ta = 25C) Item Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Forward voltage of damper diode Fall time Symbol V(BR)EBO ICES hFE VCE(sat) VBE(sat) VECF tf Min 6 -- 6 -- -- -- -- Typ -- -- -- -- -- -- 0.15 Max -- 500 25 5 1.5 2 0.3 V V V s Unit V A Test conditions IE = 500 mA, IC = 0 VCE = 1700 V, RBE = 0 VCE = 5 V, IC = 1 A IC = 6 A, IB = 1.5 A IC = 6 A, IB = 1.5 A IF = 8 A ICP = 6 A, IB1 = 1.5 A, fH = 31.5 kHz 2 2SC5219 Maximum Collector Dissipation Curve 100 Collector Power Dissipation Pc (W) 75 50 25 0 50 100 150 200 Case Temperature Tc (C) Area of Safe Operation 20 I C (A) (400 V, 16 A) 16 Collector Current 12 8 (600 V, 6 A) 4 I B2 = -1 A L = 180 H duty < 1% (900 V, 2 A) (1700 V, 0.5 mA) 0 400 800 1200 1600 2000 Collector to Emitter Voltage V CE (V) Typical Output Characteristics 10 I C (A) Tc = 25 C 2.0 A 1.8 A 1.6 A 1.4 A 1.2 A 1.0 A 0.8 A 0.6 A 0.4 A Collector Current 5 0.2 A IB=0 0 5 10 Collector to Emitter Voltage V CE (V) 3 2SC5219 DC Current Transfer Ratio vs. Collector Current 100 h FE DC Current Transfer Ratio 50 20 10 5 2 1 0.1 VCE = 5 V 0.2 0.5 1 Collector Current 2 5 I C (A) 10 25 C Tc = -25 C 75 C Collector to Emitter Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage V CE(sat) (V) 10 5 2 1 75 C IC / I B= 4 0.5 Tc = -25 C 0.2 0.1 25 C 0.2 0.5 1 2 5 Collector Current I C (A) Base to Emitter Saturation Voltage vs. Collector Current 10 0.05 0.1 10 Base to Emitter Saturetion Voltage V BE(sat) (V) I C/ I B= 4 5 2 1 Tc = -25C 25 C 0.5 0.2 0.1 75 C 0.2 0.5 1 2 5 Collector Current I C (A) 10 4 2SC5219 Collector to Emitter Saturation Voltage vs. Base Current Collector to Emitter Saturation Voltage V CE(sat) (V) 10 Tc = 25 C 5 I C= 4 A 6A 8A 0 0.1 0.2 0.5 1 Base Current 2 5 I B (A) 10 Fall Time vs. Base Current 1.0 I CP = 6 A f H = 31.5 kHz 0.8 Fall Time t f (s) 0.6 0.4 0.2 0 0.4 0.8 1.2 1.6 2.0 Base Current I B1 (A) 5 2SC5219 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 6 |
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